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| (R) DMV1500SD DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics DAMPER IF(AV) VRRM trr (typ) VF (typ) 6A 1500 V 150 ns 1.1 V MODUL. 6A 600 V 60 ns 1.0 V DAMPER MODULATION 1 2 3 FEATURES AND BENEFITS Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation 1 2 3 TO-220FPAB DMV1500SDFD 3 1 2 TO-220FPAB FD6 DMV1500SDFD6 (optional) DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. Table 2: Order Codes Part Number DMV1500SDFD DMV1500SDFD6 Marking DMV1500SD DMV1500SD October 2004 REV. 1 1/8 DMV1500SD Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal Value Damper 1500 50 150 Modul. 600 50 Unit V A C C -40 to +150 Table 4: Thermal resistances Symbol Rth(j-c) Parameter Junction to case thermal resistance Value (max.) 4 Unit C/W Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions VR = 1500 V VR = 600 V IF = 6 A IF = 6 A 1.2 1.15 Tj = 25C Typ. IR * VF ** Pulse test: Tj = 125C Typ. 100 3 1.1 1 Max. 1000 30 1.5 1.25 Unit Max. 100 3 1.75 1.4 Reverse leakage current Damper Modul. Damper Modul. A Forward voltage drop * tp = 5 ms, < 2% V ** tp = 380 s, < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : DAMPER: P = 1.2 x IF(AV) + 0.050 x IF (RMS) MODULATION: P = 0.89 x IF(AV) + 0.055 x IF (RMS) 2 2 Table 6: Recovery Characteristics Value Symbol Parameter Test conditions IF = 100mA IR =100mA IRR = 10mA Damper Typ. Tj = 25C 1000 Max. 2000 Modul. Typ. 250 Max. 400 ns 150 250 60 85 Unit trr Reverse recovery time IF = 1A dIF/dt = -50 A/s Tj = 25C VR =30V 2/8 DMV1500SD Table 7: Turn-On Switching Characteristics Symbol Parameter Test conditions IF = 6 A dIF/dt = 80 A/s VFR = 3 V IF = 6 A dIF/dt = 80 A/s VFR = 2 V IF = 6 A dIF/dt = 80 A/s IF = 6 A dIF/dt = 80 A/s Value Typ. Tj = 100C 350 Max. 500 ns Tj = 100C 70 125 Unit Damper tfr Forward recovery time Modul. Damper VFP Peak forward voltage Modul. Tj = 100C Tj = 100C 26 5 36 V 7.5 Figure 1: Power dissipation versus peak forward current (triangular waveform, =0.45) (damper diode) PF(AV)(W) 2.0 1.8 1.6 Figure 2: Power dissipation versus peak forward current (triangular waveform, =0.45) (modulation diode) PF(AV)(W) 1.6 1.4 1.2 1.4 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.2 1.0 0.8 0.6 IP(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 IP(A) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 3: Average forward current versus ambient temperature IF(AV)(A) 7 Rth(j-a)=Rth(j-c) Figure 4: Forward voltage drop versus forward current (damper diode) IFM(A) 15 14 6 5 4 3 2 DAMPER diode 13 12 11 10 9 Tj=125C (maximum values) MODULATION diode 8 7 6 5 4 3 2 Tj=125C (typical values) Tj=25C (maximum values) T 1 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM(V) 1.6 1.8 2.0 2.2 2.4 3/8 DMV1500SD Figure 5: Forward voltage drop versus forward current (modulation diode) IFM(A) 10 9 8 7 6 5 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Tj=25C (maximum values) Tj=125C (typical values) Tj=125C (maximum values) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 MODULATION diode DAMPER diode VFM(V) 0.1 0.0 1.E-03 1.E-02 1.E-01 tp(s) 1.E+00 Single pulse 1.E+01 1.E+02 Figure 7: Reverse recovery charges versus dI F/dt (damper diode) Qrr(C) 4.0 3.5 3.0 IF=IP Tj=125C Figure 8: Reverse recovery charges versus dIF/ dt (modulation diode) Qrr(nC) 300 IF=IP Tj=125C 250 200 2.5 2.0 1.5 100 1.0 0.5 50 150 dIF/dt(A/s) 0.0 0.1 1.0 10.0 100.0 0 0.1 1.0 dIF/dt(A/s) 10.0 100.0 Figure 9: Peak reverse recovery current versus dIF/dt (damper diode) IRM(A) 4.5 4.0 3.5 3.0 IF=IP Tj=125C Figure 10: Peak reverse recovery current versus dIF/dt (modulation diode) IRM(A) 4.0 3.5 3.0 2.5 IF=IP Tj=125C 2.5 2.0 2.0 1.5 1.0 0.5 1.5 1.0 0.5 dIF/dt(A/s) 0.0 0.1 1.0 10.0 0.0 0.1 1.0 dIF/dt(A/s) 10.0 100.0 4/8 DMV1500SD Figure 11: Transient peak forward voltage versus dIF/dt (damper diode, typical values) VFP(V) 50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 200 IF=IP Tj=100C Figure 12: Transient peak forward voltage versus dIF/dt (modulation diode, typical values) VFP(V) 10 9 8 7 6 5 4 3 2 IF=IP Tj=100C dIF/dt(A/s) 1 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Figure 13: Forward recovery time versus dIF/dt (damper diode, typical values) tfr(ns) 800 700 600 500 IF=IP Tj=100C VFR=3V Figure 14: Forward recovery time versus dIF/dt (modulation diode, typical values) tfr(ns) 140 120 100 80 IF=IP Tj=100C VFR=2V 400 60 300 200 100 40 20 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Figure 15: Relative variation of dynamic parameters versus junction temperature IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125C] 1.2 Figure 16: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C MODULATION diode 1.0 0.8 VFP 0.6 IRM 10 DAMPER diode 0.4 QRR 0.2 Tj(C) 0.0 25 50 75 100 125 1 1 10 VR(V) 100 1000 5/8 DMV1500SD Figure 17: TO-220FPAB FD6 Option Package Mechanical Data DIMENSIONS REF. A A H B Millimeters Min. 4.4 2.5 2.45 0.4 0.6 4.95 2.4 10 12.7 3.8 2.8 9 7 1 Typ. 2.9 3.5 Max. 4.9 2.9 2.75 0.7 1 5.2 2.7 10.7 12.8 4.2 3.2 9.9 8 Inches Min. 0.173 0.098 0.096 0.016 0.024 0.195 0.094 0.394 0.500 0.150 0.110 0.354 0.276 0.114 Max. 0.192 0.114 0.108 0.028 0.039 0.205 0.106 0.421 0.504 0.165 0.126 0.390 0.315 0.138 B D E F G L7 Dia L6 L2 G1 H L2 L3 L5 D L4 4.8 Typ. 0.189 Typ. L4 L6 L7 M1 M2 R Dia. L3 M1 F G1 G M2 E 3.75 Typ. 0.148 Typ. 0.039 Typ. Figure 18: TO-220FPAB FD6 PCB layout (typical, in millimeters) 2.54 7.5 2.2 7.9 1.0 6/8 DMV1500SD Figure 19: TO-220FPAB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 28.6 30.6 1.126 1.205 9.8 10.7 0.385 0.421 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.9 3.5 0.114 0.138 A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. Table 8: Ordering Information Part Number DMV1500SDFD DMV1500SDFD6 Marking DMV1500SD DMV1500SD Package TO-220FPAB TO-220FPAB FD6 Weight 2.4 g 2.4 g Base qty 50 45 Delivery mode Tube Tube Table 9: Revision History Date 25-Oct-2004 Revision 1 First issue Description of Changes 7/8 DMV1500SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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